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Model SI9926BDY-T1-E3
Description Trans MOSFET N-CH 20V 6.2A 8Pin SOIC N T/R
Product QR code
Brand: Vishay Semiconductor
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.69  yuan 0.69yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3273) Minimum order quantity(1)
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Technical parameters/drain source resistance:

0.03 Ω

 

Technical parameters/polarity:

N-Channel, Dual N-Channel

 

Technical parameters/dissipated power:

1.14 W

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/Leakage source breakdown voltage:

20 V

 

Technical parameters/breakdown voltage of gate source:

±12.0 V

 

Technical parameters/Continuous drain current (Ids):

8.20 A

 

Technical parameters/thermal resistance:

90℃/W (RθJA)

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SO-8

 

Dimensions/Length:

5 mm

 

Dimensions/Height:

1.55 mm

 

Dimensions/Packaging:

SO-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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