Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 15 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/rise time: 20 ns
Technical parameters/Input capacitance (Ciss): 5800pF @25V(Vds)
Technical parameters/rated power (Max): 150 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 150W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 9.15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RSJ550N10TL
|
ROHM Semiconductor | 功能相似 | TO-263-3 |
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.012 ohm, 10 V, 2.5 V
|
||
SUP60N10-18P-E3
|
Vishay Semiconductor | 功能相似 | TO-220 |
MOSFET 100V 60A 150W 18.3mohm @ 10V
|
||
SUP60N10-18P-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
MOSFET 100V 60A 150W 18.3mohm @ 10V
|
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