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Model SUP60N10-18P-E3
Description MOSFET 100V 60A 150W 18.3mohm @ 10V
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Brand: Vishay Siliconix
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3346) Minimum order quantity(1)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 3.75W (Ta), 150W (Tc)

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Continuous drain current (Ids): 60.0 A

Technical parameters/Input capacitance (Ciss): 2600pF @50V(Vds)

Technical parameters/dissipated power (Max): 3.75W (Ta), 150W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Model Brand Similarity Encapsulation Introduction Data manual
RSJ550N10TL RSJ550N10TL ROHM Semiconductor 功能相似 TO-263-3
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.012 ohm, 10 V, 2.5 V
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STP70N10F4 STP70N10F4 ST Microelectronics 功能相似 TO-220-3
N沟道100 V， 0.015 I© ， 60 A ， STripFETâ ?? ¢ DeepGATEâ ?? ¢功率MOSFET采用TO- 220 ， DPAK ， TO- 247 ， D2PAK N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™ Power MOSFET in TO-220, DPAK, TO-247, D2PAK
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