Technical parameters/number of pins: | 3 |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 100W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Continuous drain current (Ids): | 55A |
|
Technical parameters/Input capacitance (Ciss): | 6150pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 100 W |
|
Technical parameters/dissipated power (Max): | 100W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with standard/REACH SVHC version: | 2018/01/15 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP70N10F4
|
ST Microelectronics | 功能相似 | TO-220-3 |
N沟道100 V， 0.015 I© ， 60 A ， STripFETâ ?? ¢ DeepGATEâ ?? ¢功率MOSFET采用TO- 220 ， DPAK ， TO- 247 ， D2PAK N-channel 100 V, 0.015 Ω, 60 A, STripFET⢠DeepGATE⢠Power MOSFET in TO-220, DPAK, TO-247, D2PAK
|
||
SUP60N10-18P-E3
|
Vishay Semiconductor | 功能相似 | TO-220 |
MOSFET 100V 60A 150W 18.3mohm @ 10V
|
||
SUP60N10-18P-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
MOSFET 100V 60A 150W 18.3mohm @ 10V
|
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