Technical parameters/drain source resistance: 0.0183 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.75 W
Technical parameters/threshold voltage: 4.5 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 60.0 A
Technical parameters/operating temperature (Max): 175 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RSJ550N10TL
|
ROHM Semiconductor | 功能相似 | TO-263-3 |
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.012 ohm, 10 V, 2.5 V
|
||
STP70N10F4
|
ST Microelectronics | 功能相似 | TO-220-3 |
N沟道100 V, 0.015 I© , 60 A , STripFETâ ?? ¢ DeepGATEâ ?? ¢功率MOSFET采用TO- 220 , DPAK , TO- 247 , D2PAK N-channel 100 V, 0.015 Ω, 60 A, STripFET⢠DeepGATE⢠Power MOSFET in TO-220, DPAK, TO-247, D2PAK
|
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