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Model STB19NB20
Description N - Channel enhanced PowerMESH MOSFET N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
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Brand: ST Microelectronics
Packaging D2PAK
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1088) Minimum order quantity(1)
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Technical parameters/polarity: N-CH

Technical parameters/drain source voltage (Vds): 200 V

Technical parameters/Continuous drain current (Ids): 19A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: D2PAK

External dimensions/packaging: D2PAK

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF640NSTRRPBF IRF640NSTRRPBF International Rectifier 功能相似 TO-263-3
D2PAK N-CH 200V 18A
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IRF640S IRF640S Vishay Siliconix 类似代替 TO-263-3
N - CHANNEL 200V - 0.150ohm - 18A TO- 263 MESH合成] MOSFET N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET
IRF640S IRF640S International Rectifier 类似代替 D2PAK
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