Technical parameters/dissipated power: | 3.1W (Ta), 130W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/Input capacitance (Ciss): | 1300pF @25V(Vds) |
|
Technical parameters/dissipated power (Max): | 3.1W (Ta), 130W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Length: | 10.67 mm |
|
Dimensions/Width: | 9.65 mm |
|
Dimensions/Height: | 4.83 mm |
|
Dimensions/Packaging: | TO-263-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF640SPBF
|
International Rectifier | 完全替代 | D2PAK |
MOSFET N-CH 200V 18A D2PAK
|
||
IRF640STRLPBF
|
Vishay Semiconductor | 完全替代 | TO-263 |
MOSFET N-CH 200V 18A D2PAK
|
||
IRF640STRLPBF
|
Vishay Intertechnology | 完全替代 | TO-252-3 |
MOSFET N-CH 200V 18A D2PAK
|
||
IRF640STRRPBF
|
International Rectifier | 完全替代 | TO-252-3 |
MOSFET N-CH 200V 18A D2PAK
|
||
IRF640STRRPBF
|
VISHAY | 完全替代 | TO-263-3 |
MOSFET N-CH 200V 18A D2PAK
|
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