Technical parameters/drain source resistance: 180 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.1 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 18.0 A
Technical parameters/rise time: 51 ns
Technical parameters/Input capacitance (Ciss): 1300pF @25V(Vds)
Technical parameters/descent time: 36 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.1W (Ta), 130W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF640NSPBF
|
Infineon | 功能相似 | TO-263-3 |
INTERNATIONAL RECTIFIER IRF640NSPBF 场效应管, N 通道, MOSFET, 200V, 18A, D2-PAK 新
|
||
IRF640NSTRRPBF
|
International Rectifier | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 200V 18A 3Pin(2+Tab) D2PAK T/R
|
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