Technical parameters/rated voltage (DC): | 200 V |
|
Technical parameters/rated current: | 18.0 A |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 150 W |
|
Technical parameters/product series: | IRF640NS |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/Continuous drain current (Ids): | 110 A, 18.0 A |
|
Technical parameters/rise time: | 19.0 ns |
|
Technical parameters/Input capacitance (Ciss): | 1160pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 150 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Packaging: | TO-263-3 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF640SPBF
|
International Rectifier | 功能相似 | D2PAK |
功率MOSFET Power MOSFET
|
||
IRF640STRRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
功率MOSFET Power MOSFET
|
||
IRF640STRRPBF
|
VISHAY | 功能相似 | TO-263-3 |
功率MOSFET Power MOSFET
|
||
STB19NF20
|
ST Microelectronics | 功能相似 | TO-263-3 |
STB19NF20 系列 200 V 0.16 Ohm 表面贴装 N 沟道 功率 MOSFET - D2PAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review