Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 18.0 A
Technical parameters/polarity: N-Channel
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 18.0 A
Technical parameters/rise time: 51.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF640NSPBF
|
Infineon | 功能相似 | TO-263-3 |
INTERNATIONAL RECTIFIER IRF640NSPBF 场效应管, N 通道, MOSFET, 200V, 18A, D2-PAK 新
|
||
IRF640NSTRRPBF
|
International Rectifier | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 200V 18A 3Pin(2+Tab) D2PAK T/R
|
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