Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 18.0 A
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 18.0 A
Technical parameters/rise time: 51.0 ns
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: D2PAK
External dimensions/packaging: D2PAK
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF640SPBF
|
International Rectifier | 完全替代 | D2PAK |
MOSFET N-CH 200V 18A D2PAK
|
||
IRF640STRLPBF
|
Vishay Semiconductor | 完全替代 | TO-263 |
MOSFET N-CH 200V 18A D2PAK
|
||
IRF640STRLPBF
|
Vishay Intertechnology | 完全替代 | TO-252-3 |
MOSFET N-CH 200V 18A D2PAK
|
||
IRF640STRRPBF
|
International Rectifier | 完全替代 | TO-252-3 |
MOSFET N-CH 200V 18A D2PAK
|
||
IRF640STRRPBF
|
VISHAY | 完全替代 | TO-263-3 |
MOSFET N-CH 200V 18A D2PAK
|
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