Technical parameters/rated power: 1 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 3 Ω
Technical parameters/dissipated power: 1 W
Technical parameters/threshold voltage: 2.4 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 50pF @25V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6660
|
Vishay Siliconix | 功能相似 | TO-205 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
||
2N6660
|
Solid State | 功能相似 | TO-205 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
||
|
|
NJS | 功能相似 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
|||
2N7002-7-F
|
Multicomp | 功能相似 | SOT-23 |
MULTICOMP 2N7002-7-F 场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23
|
||
BS170
|
GE | 功能相似 |
小信号N沟道TO-92-3封装场效应管
|
|||
BS170
|
ON Semiconductor | 功能相似 | TO-226-3 |
小信号N沟道TO-92-3封装场效应管
|
||
BS170
|
Major Brands | 功能相似 | TO-92 |
小信号N沟道TO-92-3封装场效应管
|
||
ZVP2106A
|
Zetex | 功能相似 | TO-92-3 |
DIODES INC. ZVP2106A 晶体管, MOSFET, P沟道, -280 mA, -60 V, 4 ohm, -10 V, -3.5 V
|
||
ZVP2106A
|
Diodes Zetex | 功能相似 | TO-92-3 |
DIODES INC. ZVP2106A 晶体管, MOSFET, P沟道, -280 mA, -60 V, 4 ohm, -10 V, -3.5 V
|
||
ZVP2106A
|
Diodes | 功能相似 | TO-92-3 |
DIODES INC. ZVP2106A 晶体管, MOSFET, P沟道, -280 mA, -60 V, 4 ohm, -10 V, -3.5 V
|
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