Technical parameters/drain source resistance: 60.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.50 W
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 4.60 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4100DY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 100V 4.4A 8Pin SOIC N T/R
|
||
SI4100DY-T1-E3
|
Vishay Semiconductor | 功能相似 | SO-8 |
Trans MOSFET N-CH 100V 4.4A 8Pin SOIC N T/R
|
||
SI4482DY
|
Vishay Semiconductor | 完全替代 | SO |
Power Field-Effect Transistor, 4.6A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
||
SI4482DY
|
Visay | 完全替代 | SOIC-8 |
Power Field-Effect Transistor, 4.6A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
||
SI4482DY
|
Temic | 完全替代 |
Power Field-Effect Transistor, 4.6A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
|||
SI4482DY
|
Vishay Siliconix | 完全替代 | SO |
Power Field-Effect Transistor, 4.6A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
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