Technical parameters/dissipated power: 2.5 W
Technical parameters/rise time: 12 ns
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4100DY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 100V 4.4A 8Pin SOIC N T/R
|
||
SI4100DY-T1-E3
|
Vishay Semiconductor | 功能相似 | SO-8 |
Trans MOSFET N-CH 100V 4.4A 8Pin SOIC N T/R
|
||
SI4482DY-T1
|
Vishay Siliconix | 完全替代 | SO |
MOSFET 100V 4.6A 2.5W
|
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