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Model SI4482DY
Description N沟道100 -V （D -S ）的MOSFET N-Channel 100-V (D-S) MOSFET
Product QR code
Brand: Vishay Semiconductor
Packaging SO
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Packaging method
Standard packaging quantity 1
0yuan
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8112) Minimum order quantity(20)
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Technical parameters/drain source resistance:

60.0 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2.50 W

 

Technical parameters/Leakage source breakdown voltage:

100 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

4.60 A

 

Technical parameters/rise time:

12.0 ns

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SO

 

Dimensions/Packaging:

SO

 

Compliant with standards/RoHS standards:

Non-Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4100DY-T1-E3 SI4100DY-T1-E3 VISHAY 功能相似 SOIC-8
Trans MOSFET N-CH 100V 4.4A 8Pin SOIC N T/R
PDF
SI4100DY-T1-E3 SI4100DY-T1-E3 Vishay Semiconductor 功能相似 SO-8
Trans MOSFET N-CH 100V 4.4A 8Pin SOIC N T/R
PDF
SI4482DY-T1 SI4482DY-T1 Vishay Siliconix 完全替代 SO
MOSFET 100V 4.6A 2.5W
PDF

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