Technical parameters/drain source resistance: 60.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.50 W
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 4.60 A
Technical parameters/rise time: 12.0 ns
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4100DY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 100V 4.4A 8Pin SOIC N T/R
|
||
SI4100DY-T1-E3
|
Vishay Semiconductor | 功能相似 | SO-8 |
Trans MOSFET N-CH 100V 4.4A 8Pin SOIC N T/R
|
||
SI4482DY-T1
|
Vishay Siliconix | 完全替代 | SO |
MOSFET 100V 4.6A 2.5W
|
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