Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/Continuous drain current (Ids): 4A
Encapsulation parameters/Encapsulation: D2PAK
External dimensions/packaging: D2PAK
Other/Product Lifecycle: Unknown
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBE30S
|
International Rectifier | 功能相似 | TO-262 |
MOSFET N-CH 800V 4.1A D2PAK
|
||
IRFBE30S
|
Vishay Siliconix | 功能相似 | TO-263-3 |
MOSFET N-CH 800V 4.1A D2PAK
|
||
IRFBE30S
|
VISHAY | 功能相似 | D2PAK |
MOSFET N-CH 800V 4.1A D2PAK
|
||
|
|
ST Microelectronics | 功能相似 | D2PAK |
晶体管| MOSFET | N沟道| 800V V( BR ) DSS | 3.1AI (D ) | TO- 263AB TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.1A I(D) | TO-263AB
|
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