Technical parameters/dissipated power: 125W (Tc)
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/Input capacitance (Ciss): 1300pF @25V(Vds)
Technical parameters/dissipated power (Max): 125W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBE30SPBF
|
Vishay Semiconductor | 类似代替 | D2PAK-263 |
MOSFET N-CH 800V 4.1A D2PAK
|
||
IRFBE30SPBF
|
VISHAY | 类似代替 | TO-263-3 |
MOSFET N-CH 800V 4.1A D2PAK
|
||
IRFBE30SPBF
|
International Rectifier | 类似代替 | TO-262 |
MOSFET N-CH 800V 4.1A D2PAK
|
||
IRFBE30STRLPBF
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Power Field-Effect Transistor, 4.1A I(D), 800V, 3Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
|
||
|
IRFBE30STRLPBF
|
Vishay Intertechnology | 功能相似 |
Power Field-Effect Transistor, 4.1A I(D), 800V, 3Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
|
|||
IRFBE30STRLPBF
|
VISHAY | 功能相似 | TO-263-3 |
Power Field-Effect Transistor, 4.1A I(D), 800V, 3Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
|
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