Technical parameters/rated voltage (DC): 800 V
Technical parameters/rated current: 4.10 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/leakage source breakdown voltage: 800 V
Technical parameters/Continuous drain current (Ids): 4.10 A
Technical parameters/rise time: 33.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262
External dimensions/packaging: TO-262
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF540NSPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INTERNATIONAL RECTIFIER IRF540NSPBF 场效应管, N 通道, MOSFET, 100V, 33A, D2-PAK 新
|
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