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Model STB3NA80T4
Description 晶体管| MOSFET | N沟道| 800V V（ BR ） DSS | 3.1AI （D ） | TO- 263AB TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.1A I(D) | TO-263AB
Product QR code
Brand: ST Microelectronics
Packaging D2PAK
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
20+:
$ 0.0000
50+:
$ 0.0000
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$ 0.0000
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$ 0.0000
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$ 0.0000
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$ 0.0000
5000+:
$ 0.0000
10000+:
$ 0.0000
Quantity
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$0.0000
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Price $ 0.0000 $ 0.0000 $ 0.0000 $ 0.0000 $ 0.0000
Start batch production 20+ 50+ 100+ 300+ 500+
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6309) Minimum order quantity(20)
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Technical parameters/polarity:

N-CH

 

Technical parameters/drain source voltage (Vds):

800 V

 

Technical parameters/Continuous drain current (Ids):

3.1A

 

Encapsulation parameters/Encapsulation:

D2PAK

 

Dimensions/Packaging:

D2PAK

 

Other/Product Lifecycle:

Unknown

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFBE30STRLPBF IRFBE30STRLPBF Vishay Siliconix 功能相似 TO-263-3
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PDF
IRFBE30STRLPBF IRFBE30STRLPBF Vishay Intertechnology 功能相似
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IRFBE30STRLPBF IRFBE30STRLPBF VISHAY 功能相似 TO-263-3
Power Field-Effect Transistor, 4.1A I(D), 800V, 3Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
PDF
MTB4N80E MTB4N80E ON Semiconductor 功能相似 D2PAK
D2PAK N-CH 800V 4A

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