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Model IRFBE30S
Description Power MOSFET
Product QR code
Brand: VISHAY
Packaging D2PAK
Delivery time
Packaging method
Standard packaging quantity 1
0.96  yuan 0.96yuan
10+:
$ 1.2893
50+:
$ 1.2224
100+:
$ 1.1747
300+:
$ 1.1460
500+:
$ 1.1174
1000+:
$ 1.0887
2500+:
$ 1.0457
5000+:
$ 1.0362
Quantity
10+
50+
100+
300+
500+
Price
$1.2893
$1.2224
$1.1747
$1.1460
$1.1174
Price $ 1.2893 $ 1.2224 $ 1.1747 $ 1.1460 $ 1.1174
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7355) Minimum order quantity(10)
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Technical parameters/polarity: N-CH

Technical parameters/drain source voltage (Vds): 800 V

Technical parameters/Continuous drain current (Ids): 4.1A

Encapsulation parameters/Encapsulation: D2PAK

External dimensions/packaging: D2PAK

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFBE30SPBF IRFBE30SPBF Vishay Semiconductor 类似代替 D2PAK-263
MOSFET N-CH 800V 4.1A D2PAK
PDF
IRFBE30SPBF IRFBE30SPBF VISHAY 类似代替 TO-263-3
MOSFET N-CH 800V 4.1A D2PAK
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IRFBE30SPBF IRFBE30SPBF International Rectifier 类似代替 TO-262
MOSFET N-CH 800V 4.1A D2PAK
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IRFBE30STRLPBF IRFBE30STRLPBF Vishay Siliconix 功能相似 TO-263-3
Power Field-Effect Transistor, 4.1A I(D), 800V, 3Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
PDF
IRFBE30STRLPBF IRFBE30STRLPBF Vishay Intertechnology 功能相似
Power Field-Effect Transistor, 4.1A I(D), 800V, 3Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
PDF
IRFBE30STRLPBF IRFBE30STRLPBF VISHAY 功能相似 TO-263-3
Power Field-Effect Transistor, 4.1A I(D), 800V, 3Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
PDF

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