Technical parameters/forward voltage: 0.875 V
Technical parameters/reverse recovery time: 30 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: G-112
External dimensions/packaging: G-112
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Sensitron Semiconductor | 功能相似 | Case 304 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon,
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Semtech Corporation | 功能相似 | G-112 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon,
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1N5809
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Solid State Devices | 功能相似 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon,
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JAN1N5809
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Microsemi | 完全替代 | Case E |
Diode Switching 100V 6A 2Pin Case G-112
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JAN1N5809
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Semtech Corporation | 完全替代 | G-112 |
Diode Switching 100V 6A 2Pin Case G-112
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Sensitron Semiconductor | 功能相似 | Case 304 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
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JANTXV1N5809
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Semtech Corporation | 功能相似 | G-112 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
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JANTXV1N5809
|
Microchip | 功能相似 | B-Package-2 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
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JANTXV1N5809
|
Microsemi | 功能相似 | B-Package-2 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
|
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