Technical parameters/forward voltage: | 875mV @4A |
|
Technical parameters/reverse recovery time: | 30 ns |
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Technical parameters/forward current: | 6000 mA |
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Technical parameters/forward voltage (Max): | 875mV @4A |
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Technical parameters/forward current (Max): | 6 A |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | Case E |
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Dimensions/Packaging: | Case E |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bag |
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Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: |
| |
Compliant with standards/military grade: | Yes |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Sensitron Semiconductor | 完全替代 | Case 304 |
整流器 D MET 6A SFST 100V
|
||
|
|
Semtech Corporation | 完全替代 | G-112 |
整流器 D MET 6A SFST 100V
|
||
1N5809
|
Solid State Devices | 完全替代 |
整流器 D MET 6A SFST 100V
|
|||
|
|
Sensitron Semiconductor | 完全替代 | 2 |
超快速整流器 ULTRA FAST RECTIFIERS
|
||
|
|
Sensitron Semiconductor | 完全替代 | Case 304 |
Rectifier Diode, 1 Phase, 1Element, 1.7A, 100V V(RRM), Silicon, HERMETIC SEALED, G112, 2Pin
|
||
JANTX1N5809
|
Semtech Corporation | 完全替代 | G-112 |
Rectifier Diode, 1 Phase, 1Element, 1.7A, 100V V(RRM), Silicon, HERMETIC SEALED, G112, 2Pin
|
||
|
|
Sensitron Semiconductor | 完全替代 | Case 304 |
Diode Switching 100V 6A 2Pin Case G-112
|
||
JANTXV1N5809
|
Semtech Corporation | 完全替代 | G-112 |
Diode Switching 100V 6A 2Pin Case G-112
|
||
JANTXV1N5809
|
Microchip | 完全替代 | B-Package-2 |
Diode Switching 100V 6A 2Pin Case G-112
|
||
JANTXV1N5809
|
Microsemi | 完全替代 | B-Package-2 |
Diode Switching 100V 6A 2Pin Case G-112
|
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