Technical parameters/forward voltage: | 0.875 V |
|
Technical parameters/reverse recovery time: | 30 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | Case 304 |
|
Dimensions/Packaging: | Case 304 |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Sensitron Semiconductor | 功能相似 | Case 304 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon,
|
||
|
|
Semtech Corporation | 功能相似 | G-112 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon,
|
||
1N5809
|
Solid State Devices | 功能相似 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon,
|
|||
JAN1N5809
|
Microsemi | 完全替代 | Case E |
Diode Switching 100V 6A 2Pin Case G-112
|
||
JAN1N5809
|
Semtech Corporation | 完全替代 | G-112 |
Diode Switching 100V 6A 2Pin Case G-112
|
||
|
|
Sensitron Semiconductor | 功能相似 | Case 304 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
|
||
JANTXV1N5809
|
Semtech Corporation | 功能相似 | G-112 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
|
||
JANTXV1N5809
|
Microchip | 功能相似 | B-Package-2 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
|
||
JANTXV1N5809
|
Microsemi | 功能相似 | B-Package-2 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review