Technical parameters/reverse recovery time: 30 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: G-112
External dimensions/packaging: G-112
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Sensitron Semiconductor | 完全替代 | Case 304 |
整流器 D MET 6A SFST 100V
|
||
|
|
Semtech Corporation | 完全替代 | G-112 |
整流器 D MET 6A SFST 100V
|
||
1N5809
|
Solid State Devices | 完全替代 |
整流器 D MET 6A SFST 100V
|
|||
|
|
Sensitron Semiconductor | 完全替代 | 2 |
超快速整流器 ULTRA FAST RECTIFIERS
|
||
|
|
Sensitron Semiconductor | 完全替代 | Case 304 |
Rectifier Diode, 1 Phase, 1Element, 1.7A, 100V V(RRM), Silicon, HERMETIC SEALED, G112, 2Pin
|
||
JANTX1N5809
|
Semtech Corporation | 完全替代 | G-112 |
Rectifier Diode, 1 Phase, 1Element, 1.7A, 100V V(RRM), Silicon, HERMETIC SEALED, G112, 2Pin
|
||
|
|
Sensitron Semiconductor | 完全替代 | Case 304 |
Diode Switching 100V 6A 2Pin Case G-112
|
||
JANTXV1N5809
|
Semtech Corporation | 完全替代 | G-112 |
Diode Switching 100V 6A 2Pin Case G-112
|
||
JANTXV1N5809
|
Microchip | 完全替代 | B-Package-2 |
Diode Switching 100V 6A 2Pin Case G-112
|
||
JANTXV1N5809
|
Microsemi | 完全替代 | B-Package-2 |
Diode Switching 100V 6A 2Pin Case G-112
|
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