Technical parameters/forward voltage: 875mV @4A
Technical parameters/reverse recovery time: 30 ns
Technical parameters/forward current: 6000 mA
Technical parameters/forward voltage (Max): 875mV @4A
Technical parameters/forward current (Max): 6 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: B-Package-2
External dimensions/length: 7.62 mm
External dimensions/packaging: B-Package-2
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
Compliant with standards/military grade: Yes
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5809US
|
Semtech Corporation | 完全替代 | SMD |
Diode Switching 100V 6A 2Pin SMD
|
||
580
|
MG Chemicals | 功能相似 |
Rectifier Diode, 1 Element, 6A, 100V V(RRM),
|
|||
|
|
Sensitron Semiconductor | 功能相似 | 2 |
Diode Ultra Fast Recovery Rectifier 100V 6A 2Pin
|
||
|
|
Sensitron Semiconductor | 完全替代 | Case 304 |
Rectifier Diode, 1 Phase, 1Element, 1.7A, 100V V(RRM), Silicon, HERMETIC SEALED, G112, 2Pin
|
||
JANTX1N5809
|
Semtech Corporation | 完全替代 | G-112 |
Rectifier Diode, 1 Phase, 1Element, 1.7A, 100V V(RRM), Silicon, HERMETIC SEALED, G112, 2Pin
|
||
JANTX1N5809US
|
Sensitron Semiconductor | 完全替代 | MELF-B |
整流器 D MET 6A SFST 100V HR
|
||
JANTX1N5809US
|
Microsemi | 完全替代 | E-MELF |
整流器 D MET 6A SFST 100V HR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review