Technical parameters/rated power: 80 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0135 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 80 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 51A
Technical parameters/rise time: 160 ns
Technical parameters/Input capacitance (Ciss): 1620pF @25V(Vds)
Technical parameters/descent time: 42 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 80W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/height: 8.77 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
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IRF1010NSTRLPBF
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Infineon | 功能相似 | TO-263-3 |
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STP55NF06L
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ST Microelectronics | 功能相似 | TO-220-3 |
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STP60NF06L
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ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™ II，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
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STP80NF55-08
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ST Microelectronics | 功能相似 | TO-220-3 |
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