Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 85.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 180 W
Technical parameters/product series: IRF1010NS
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55.0 V
Technical parameters/Continuous drain current (Ids): 85.0 A
Technical parameters/rise time: 76.0 ns
Technical parameters/Input capacitance (Ciss): 3210pF @25V(Vds)
Technical parameters/rated power (Max): 180 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFZ44ZSPBF
|
International Rectifier | 类似代替 | TO-263-3 |
INFINEON IRFZ44ZSPBF 晶体管, MOSFET, N沟道, 51 A, 55 V, 13.9 mohm, 10 V, 4 V
|
||
IRFZ44ZSPBF
|
Infineon | 类似代替 | TO-263-3 |
INFINEON IRFZ44ZSPBF 晶体管, MOSFET, N沟道, 51 A, 55 V, 13.9 mohm, 10 V, 4 V
|
||
STB60NF06LT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB60NF06LT4 晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V
|
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