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Specification parameters
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Technical parameters/rated power:

80 W

Technical parameters/number of channels:

Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.0139 Ω

Technical parameters/polarity:

N-Channel

Technical parameters/dissipated power:

80 W

Technical parameters/threshold voltage:

4 V

Technical parameters/drain source voltage (Vds):

55 V

Technical parameters/Leakage source breakdown voltage:

55 V

Technical parameters/Continuous drain current (Ids):

51A

Technical parameters/rise time:

68 ns

Technical parameters/Input capacitance (Ciss):

1420pF @25V(Vds)

Technical parameters/descent time:

41 ns

Technical parameters/operating temperature (Max):

175 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

80000 mW

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-263-3

Dimensions/Length:

10.67 mm

Dimensions/Width:

9.65 mm

Dimensions/Height:

4.83 mm

Dimensions/Packaging:

TO-263-3

Physical parameters/materials:

Silicon

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

Other/Product Lifecycle:

Not Recommended for New Designs

Other/Packaging Methods:

Tube

Other/Manufacturing Applications:

Power Management

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
IRF1010NSTRLPBF	International Rectifier	类似代替	TO-263-3	HEXFET® N 通道功率 MOSFET 超过 55A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。	PDF
IRF1010NSTRLPBF	Infineon	类似代替	TO-263-3	HEXFET® N 通道功率 MOSFET 超过 55A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。	PDF
STB55NF06T4	ST Microelectronics	功能相似	TO-263-3	N 通道 STripFET™ II，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics	PDF
STB60NF06LT4	ST Microelectronics	功能相似	TO-263-3	STMICROELECTRONICS STB60NF06LT4 晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V

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CONTACT US

ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643