Technical parameters/rated voltage (DC): | 60.0 V |
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Technical parameters/rated current: | 60.0 A |
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Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.014 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 110 W |
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Technical parameters/threshold voltage: | 1 V |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | 60.0 V |
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Technical parameters/breakdown voltage of gate source: | ±15.0 V |
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Technical parameters/Continuous drain current (Ids): | 60.0 A |
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Technical parameters/rise time: | 220 ns |
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Technical parameters/Input capacitance (Ciss): | 2000pF @25V(Vds) |
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Technical parameters/rated power (Max): | 110 W |
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Technical parameters/descent time: | 30 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 110W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.4 mm |
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Dimensions/Width: | 4.6 mm |
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Dimensions/Height: | 9.15 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -65℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | Portable equipment, Power Management, |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP60NF06
|
ST Microelectronics | 类似代替 | TO-220-3 |
STMICROELECTRONICS STP60NF06 晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 10 V, 2 V
|
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