Technical parameters/rated voltage (DC): -100 V
Technical parameters/rated current: -5.60 A
Technical parameters/drain source resistance: 600 mΩ (max)
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 42.0 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: -100 V
Technical parameters/Continuous drain current (Ids): 5.60 A
Technical parameters/rise time: 29.0 ns
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Precision Group | 完全替代 | TO-252 |
Trans MOSFET P-CH 100V 5.6A 3Pin(2+Tab) DPAK
|
||
IRFR9120PBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
Trans MOSFET P-CH 100V 5.6A 3Pin(2+Tab) DPAK
|
||
IRFR9120PBF
|
LiteOn | 完全替代 | DPAK |
Trans MOSFET P-CH 100V 5.6A 3Pin(2+Tab) DPAK
|
||
IRFR9120PBF
|
VISHAY | 完全替代 | TO-252-3 |
Trans MOSFET P-CH 100V 5.6A 3Pin(2+Tab) DPAK
|
||
IRFR9120PBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
Trans MOSFET P-CH 100V 5.6A 3Pin(2+Tab) DPAK
|
||
IRFR9120TRLPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120TRLPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120TRPBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120TRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 5.6A DPAK
|
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