Technical parameters/dissipated power: 2.5W (Ta), 42W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 390pF @25V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 42W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR9120
|
Fairchild | 完全替代 | 3 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120
|
Intersil | 完全替代 |
MOSFET P-CH 100V 5.6A DPAK
|
|||
IRFR9120
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120
|
International Rectifier | 完全替代 | TO-252 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120
|
Vishay Semiconductor | 完全替代 |
MOSFET P-CH 100V 5.6A DPAK
|
|||
IRFR9120
|
VISHAY | 完全替代 | TO-252 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120
|
Harris | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120NPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INTERNATIONAL RECTIFIER IRFR9120NPBF 场效应管, P通道, MOSFET, -100V, 6.6A D-PAK 新
|
||
IRFR9120TRL
|
International Rectifier | 完全替代 | TO-252 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120TRL
|
VISHAY | 完全替代 | DPAK-252 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120TRL
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120TRPBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120TRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 5.6A DPAK
|
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