Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.6 Ω |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 42 W |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Continuous drain current (Ids): | -5.60 A |
|
Technical parameters/rise time: | 29 ns |
|
Technical parameters/descent time: | 25 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 42 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252 |
|
Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.38 mm |
|
Dimensions/Packaging: | TO-252 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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VISHAY IRFR9120PBF. 场效应管, MOSFET, P沟道
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LiteOn | 完全替代 | DPAK |
VISHAY IRFR9120PBF. 场效应管, MOSFET, P沟道
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IRFR9120PBF
|
VISHAY | 完全替代 | TO-252-3 |
VISHAY IRFR9120PBF. 场效应管, MOSFET, P沟道
|
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IRFR9120PBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
VISHAY IRFR9120PBF. 场效应管, MOSFET, P沟道
|
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