Technical parameters/drain source resistance: | 0.6 Ω |
|
Technical parameters/dissipated power: | 42 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252 |
|
Dimensions/Length: | 6.73 mm |
|
Dimensions/Packaging: | TO-252 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR9120
|
Fairchild | 完全替代 | 3 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120
|
Intersil | 完全替代 |
MOSFET P-CH 100V 5.6A DPAK
|
|||
IRFR9120
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120
|
International Rectifier | 完全替代 | TO-252 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120
|
Vishay Semiconductor | 完全替代 |
MOSFET P-CH 100V 5.6A DPAK
|
|||
IRFR9120
|
VISHAY | 完全替代 | TO-252 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120
|
Harris | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120NPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRFR9120NPBF 晶体管, MOSFET, P沟道, 6.6 A, -100 V, 480 mohm, -10 V, -4 V
|
||
IRFR9120TRL
|
International Rectifier | 完全替代 | TO-252 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120TRL
|
VISHAY | 完全替代 | DPAK-252 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120TRL
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120TRPBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET P-CH 100V 5.6A DPAK
|
||
IRFR9120TRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 5.6A DPAK
|
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