Technical parameters/dissipated power: 36W (Tc)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Input capacitance (Ciss): 229pF @25V(Vds)
Technical parameters/rated power (Max): 36 W
Technical parameters/dissipated power (Max): 36W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR1N60APBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 1.4A DPAK
|
||
IRFR1N60APBF
|
International Rectifier | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 1.4A DPAK
|
||
IRFR1N60ATR
|
VISHAY | 完全替代 | DPAK-252 |
MOSFET N-CH 600V 1.4A DPAK
|
||
IRFR1N60ATR
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 600V 1.4A DPAK
|
|||
IRFR1N60ATR
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 1.4A DPAK
|
||
|
|
Vishay Intertechnology | 完全替代 | TO-252 |
Trans MOSFET N-CH 600V 1.4A 3Pin(2+Tab) DPAK T/R
|
||
IRFR1N60ATRPBF
|
Vishay Semiconductor | 完全替代 | DPAK |
Trans MOSFET N-CH 600V 1.4A 3Pin(2+Tab) DPAK T/R
|
||
IRFR1N60ATRPBF
|
International Rectifier | 完全替代 | TO-252 |
Trans MOSFET N-CH 600V 1.4A 3Pin(2+Tab) DPAK T/R
|
||
IRFR1N60ATRPBF
|
VISHAY | 完全替代 | TO-252-3 |
Trans MOSFET N-CH 600V 1.4A 3Pin(2+Tab) DPAK T/R
|
||
IRFR1N60ATRPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
Trans MOSFET N-CH 600V 1.4A 3Pin(2+Tab) DPAK T/R
|
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