Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 600 V |
|
Technical parameters/Continuous drain current (Ids): | 1.4A |
|
Technical parameters/rise time: | 14 ns |
|
Technical parameters/Input capacitance (Ciss): | 229pF @25V(Vds) |
|
Technical parameters/descent time: | 20 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 36000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | DPAK-252 |
|
Dimensions/Packaging: | DPAK-252 |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR1N60A
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 1.4A DPAK
|
||
IRFR1N60APBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 1.4A DPAK
|
||
IRFR1N60APBF
|
International Rectifier | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 1.4A DPAK
|
||
|
|
Vishay Intertechnology | 完全替代 | TO-252 |
Trans MOSFET N-CH 600V 1.4A 3Pin(2+Tab) DPAK T/R
|
||
IRFR1N60ATRPBF
|
Vishay Semiconductor | 完全替代 | DPAK |
Trans MOSFET N-CH 600V 1.4A 3Pin(2+Tab) DPAK T/R
|
||
IRFR1N60ATRPBF
|
International Rectifier | 完全替代 | TO-252 |
Trans MOSFET N-CH 600V 1.4A 3Pin(2+Tab) DPAK T/R
|
||
IRFR1N60ATRPBF
|
VISHAY | 完全替代 | TO-252-3 |
Trans MOSFET N-CH 600V 1.4A 3Pin(2+Tab) DPAK T/R
|
||
IRFR1N60ATRPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
Trans MOSFET N-CH 600V 1.4A 3Pin(2+Tab) DPAK T/R
|
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