Technical parameters/polarity: N-Channel
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 1.40 A
Technical parameters/rise time: 14 ns
Technical parameters/Input capacitance (Ciss): 229pF @25V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 36 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: DPAK
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: DPAK
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR1N60A
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 1.4A DPAK
|
||
IRFR1N60APBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 1.4A DPAK
|
||
IRFR1N60APBF
|
International Rectifier | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 1.4A DPAK
|
||
IRFR1N60ATR
|
VISHAY | 完全替代 | DPAK-252 |
MOSFET N-CH 600V 1.4A DPAK
|
||
IRFR1N60ATR
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 600V 1.4A DPAK
|
|||
IRFR1N60ATR
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 1.4A DPAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review