Technical parameters/dissipated power: 36W (Tc)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Input capacitance (Ciss): 229pF @25V(Vds)
Technical parameters/rated power (Max): 36 W
Technical parameters/dissipated power (Max): 36W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR1N60A
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 1.4A DPAK
|
||
IRFR1N60APBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 1.4A DPAK
|
||
IRFR1N60APBF
|
International Rectifier | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 1.4A DPAK
|
||
IRFR1N60ATR
|
VISHAY | 完全替代 | DPAK-252 |
MOSFET N-CH 600V 1.4A DPAK
|
||
IRFR1N60ATR
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 600V 1.4A DPAK
|
|||
IRFR1N60ATR
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 1.4A DPAK
|
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