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Model IRFPF40
Description MOSFET N-CH 900V 4.7A TO-247AC
Product QR code
Brand: Vishay Siliconix
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4611) Minimum order quantity(1)
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Technical parameters/number of channels: 1

Technical parameters/dissipated power: 150W (Tc)

Technical parameters/drain source voltage (Vds): 900 V

Technical parameters/Input capacitance (Ciss): 1600pF @25V(Vds)

Technical parameters/dissipated power (Max): 150W (Tc)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/width: 5.31 mm

External dimensions/packaging: TO-247-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFPF40 IRFPF40 VISHAY 功能相似 TO-247
Power Field-Effect Transistor, 4.7A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
IRFPF40 IRFPF40 Vishay Semiconductor 功能相似
Power Field-Effect Transistor, 4.7A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
PDF
IRFPF40 IRFPF40 Vishay Intertechnology 功能相似
Power Field-Effect Transistor, 4.7A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
PDF
IRFPF40 IRFPF40 Vishay Siliconix 功能相似 TO-247-3
Power Field-Effect Transistor, 4.7A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
PDF
IRFPF40PBF IRFPF40PBF Vishay Semiconductor 完全替代 TO-247-3
MOSFET N-CH 900V 4.7A TO-247AC
PDF
IRFPF40PBF IRFPF40PBF Vishay Siliconix 完全替代 TO-247-3
MOSFET N-CH 900V 4.7A TO-247AC
PDF
IRFPF40PBF IRFPF40PBF International Rectifier 完全替代 TO-247
MOSFET N-CH 900V 4.7A TO-247AC
PDF

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