Technical parameters/rise time: | 36 ns |
|
Technical parameters/Input capacitance (Ciss): | 1600pF @25V(Vds) |
|
Technical parameters/descent time: | 32 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 150000 mW |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-247 |
|
Dimensions/Packaging: | TO-247 |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFPF40
|
VISHAY | 功能相似 | TO-247 |
Power Field-Effect Transistor, 4.7A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
|
||
IRFPF40
|
Vishay Semiconductor | 功能相似 |
Power Field-Effect Transistor, 4.7A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
|
|||
IRFPF40
|
Vishay Intertechnology | 功能相似 |
Power Field-Effect Transistor, 4.7A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
|
|||
IRFPF40
|
Vishay Siliconix | 功能相似 | TO-247-3 |
Power Field-Effect Transistor, 4.7A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
|
||
IRFPF40PBF
|
Vishay Semiconductor | 完全替代 | TO-247-3 |
MOSFET N-CH 900V 4.7A TO-247AC
|
||
IRFPF40PBF
|
Vishay Siliconix | 完全替代 | TO-247-3 |
MOSFET N-CH 900V 4.7A TO-247AC
|
||
IRFPF40PBF
|
International Rectifier | 完全替代 | TO-247 |
MOSFET N-CH 900V 4.7A TO-247AC
|
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