Technical parameters/rated power: 150 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 2.5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/Continuous drain current (Ids): 4.70 A
Technical parameters/Input capacitance (Ciss): 1600pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.87 mm
External dimensions/width: 5.31 mm
External dimensions/height: 20.7 mm
External dimensions/packaging: TO-247-3
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFPF40
|
VISHAY | 完全替代 | TO-247 |
MOSFET N-CH 900V 4.7A TO-247AC
|
||
IRFPF40
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 900V 4.7A TO-247AC
|
|||
IRFPF40
|
Vishay Intertechnology | 完全替代 |
MOSFET N-CH 900V 4.7A TO-247AC
|
|||
IRFPF40
|
Vishay Siliconix | 完全替代 | TO-247-3 |
MOSFET N-CH 900V 4.7A TO-247AC
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review