Technical parameters/rated voltage (DC): 900 V
Technical parameters/rated current: 4.70 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/leakage source breakdown voltage: 900 V
Technical parameters/Continuous drain current (Ids): 4.70 A
Technical parameters/rise time: 36.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFPF40
|
VISHAY | 完全替代 | TO-247 |
MOSFET N-CH 900V 4.7A TO-247AC
|
||
IRFPF40
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 900V 4.7A TO-247AC
|
|||
IRFPF40
|
Vishay Intertechnology | 完全替代 |
MOSFET N-CH 900V 4.7A TO-247AC
|
|||
IRFPF40
|
Vishay Siliconix | 完全替代 | TO-247-3 |
MOSFET N-CH 900V 4.7A TO-247AC
|
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