Technical parameters/drain source resistance: 28 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 48000 mW
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 30A
Technical parameters/rise time: 120 ns
Technical parameters/Input capacitance (Ciss): 2500pF @25V(Vds)
Technical parameters/descent time: 86 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 48000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFIZ44G
|
VISHAY | 完全替代 | TO-220 |
MOSFET N-CH 60V 30A TO220FP
|
||
IRFIZ44G
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET N-CH 60V 30A TO220FP
|
||
IRFIZ44G
|
IRF | 完全替代 |
MOSFET N-CH 60V 30A TO220FP
|
|||
IRFIZ44G
|
Vishay Semiconductor | 完全替代 | TO-220-3 |
MOSFET N-CH 60V 30A TO220FP
|
||
IRFIZ44GPBF
|
Vishay Intertechnology | 功能相似 | TO-220 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3
|
||
IRFIZ44GPBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3
|
||
IRFIZ44GPBF
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3
|
||
|
IRFIZ44GPBF
|
LiteOn | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3
|
||
IRFIZ44GPBF
|
VISHAY | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3
|
||
STP55NE06FP
|
ST Microelectronics | 功能相似 | TO-220 |
N - 沟道增强型单一特征尺寸功率MOSFET N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
|
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