Technical parameters/number of channels: 1
Technical parameters/polarity: N-Channel
Technical parameters/drain source voltage (Vds): 60.0 V
Technical parameters/Continuous drain current (Ids): 30.0 A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15.49 mm
External dimensions/packaging: TO-220-3
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFIZ44GPBF
|
Vishay Intertechnology | 完全替代 | TO-220 |
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220 Full-Pak
|
||
IRFIZ44GPBF
|
Vishay Siliconix | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220 Full-Pak
|
||
IRFIZ44GPBF
|
Vishay Semiconductor | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220 Full-Pak
|
||
IRFIZ44GPBF
|
LiteOn | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220 Full-Pak
|
||
IRFIZ44GPBF
|
VISHAY | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220 Full-Pak
|
||
STP55NE06FP
|
ST Microelectronics | 功能相似 | TO-220 |
N - 沟道增强型单一特征尺寸功率MOSFET N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
|
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