Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/궟동: Single
Other/Case/Package: TO-220FP-3
Other/Packaging: Tube
Other/Brand: Vishay / Siliconix
Other/동착 동: Through Hole
Other/Soft 랜イ동터극동: N-Channel
Other/Channel Mode: Enhancement
Other/하강 Economy: 86 ns
Other/Id - Link Files: 30 A
Other/Delete 동업체: Vishay
Other/동대작동온도: 175 C
Other/π소작동온도: 55 C
Other/Pd - 력발산: 48 W
Other/Delete 품카테 High speed: Single-Gate MOSFET Transistors
Other/RDs On - Drain Source 저항: 28 mOhms
Other/상승クク: 120 ns
Other/Standard Pack Qty: 1000
Other/표준오프い Contact Us: 55 ns
Other/Vds - 레イ?동항복압: 60 V
Other/Vgs - 게イプ - ?동항복압: 20 V
Other/RoHS: Non-Compliant
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFIZ44G
|
VISHAY | 完全替代 | TO-220 |
MOSFET N-CH 60V 30A TO220FP
|
||
IRFIZ44G
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET N-CH 60V 30A TO220FP
|
||
IRFIZ44G
|
IRF | 完全替代 |
MOSFET N-CH 60V 30A TO220FP
|
|||
IRFIZ44G
|
Vishay Semiconductor | 完全替代 | TO-220-3 |
MOSFET N-CH 60V 30A TO220FP
|
||
IRFIZ44GPBF
|
Vishay Intertechnology | 功能相似 | TO-220 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3
|
||
IRFIZ44GPBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3
|
||
IRFIZ44GPBF
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3
|
||
|
IRFIZ44GPBF
|
LiteOn | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3
|
||
IRFIZ44GPBF
|
VISHAY | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.028Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3
|
||
STP55NE06FP
|
ST Microelectronics | 功能相似 | TO-220 |
N - 沟道增强型单一特征尺寸功率MOSFET N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
|
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