Technical parameters/dissipated power: 48W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 2500pF @25V(Vds)
Technical parameters/rated power (Max): 48 W
Technical parameters/dissipated power (Max): 48W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFIZ44GPBF
|
Vishay Intertechnology | 完全替代 | TO-220 |
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220 Full-Pak
|
||
IRFIZ44GPBF
|
Vishay Siliconix | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220 Full-Pak
|
||
IRFIZ44GPBF
|
Vishay Semiconductor | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220 Full-Pak
|
||
IRFIZ44GPBF
|
LiteOn | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220 Full-Pak
|
||
IRFIZ44GPBF
|
VISHAY | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220 Full-Pak
|
||
STP55NE06FP
|
ST Microelectronics | 功能相似 | TO-220 |
N - 沟道增强型单一特征尺寸功率MOSFET N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
|
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