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Description VISHAY IRFBC40APBF Power Field Effect Transistor, MOSFET, N-channel, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V
Product QR code
Packaging TO-220
Delivery time
Packaging method Tube
Standard packaging quantity 1
4.54  yuan 4.54yuan
5+:
$ 6.1331
25+:
$ 5.6788
50+:
$ 5.3607
100+:
$ 5.2245
500+:
$ 5.1336
2500+:
$ 5.0200
5000+:
$ 4.9746
10000+:
$ 4.9064
Quantity
5+
25+
50+
100+
500+
Price
$6.1331
$5.6788
$5.3607
$5.2245
$5.1336
Price $ 6.1331 $ 5.6788 $ 5.3607 $ 5.2245 $ 5.1336
Start batch production 5+ 25+ 50+ 100+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(6508) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 600 V

Technical parameters/rated current: 6.20 A

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 1.2 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 125 W

Technical parameters/threshold voltage: 4 V

Technical parameters/input capacitance: 1036pF @25V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/leakage source breakdown voltage: 600 V

Technical parameters/Continuous drain current (Ids): 6.20 A

Technical parameters/rise time: 23.0 ns

Technical parameters/Input capacitance (Ciss): 1036pF @25V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 125 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220

External dimensions/length: 10.41 mm

External dimensions/width: 4.7 mm

External dimensions/height: 9.01 mm

External dimensions/packaging: TO-220

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Industrial, Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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