Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 6.20 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 1036pF @25V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 6.20 A
Technical parameters/rise time: 23.0 ns
Technical parameters/Input capacitance (Ciss): 1036pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 125 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.01 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBC30APBF
|
VISHAY | 功能相似 | TO-220-3 |
VISHAY IRFBC30APBF 功率场效应管, MOSFET, N沟道, 3.6 A, 600 V, 2.2 ohm, 10 V, 4.5 V
|
||
IRFBC30APBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
VISHAY IRFBC30APBF 功率场效应管, MOSFET, N沟道, 3.6 A, 600 V, 2.2 ohm, 10 V, 4.5 V
|
||
IRFBC30APBF
|
LiteOn | 功能相似 | TO-220-3 |
VISHAY IRFBC30APBF 功率场效应管, MOSFET, N沟道, 3.6 A, 600 V, 2.2 ohm, 10 V, 4.5 V
|
||
IRFBC30APBF
|
Infineon | 功能相似 |
VISHAY IRFBC30APBF 功率场效应管, MOSFET, N沟道, 3.6 A, 600 V, 2.2 ohm, 10 V, 4.5 V
|
|||
STP5NK60Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP5NK60Z 功率场效应管, MOSFET, N沟道, 5 A, 600 V, 1.2 ohm, 10 V, 3.75 V
|
||
STP6N62K3
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP6N62K3 功率场效应管, MOSFET, N沟道, 5.5 A, 620 V, 0.95 ohm, 10 V, 3.75 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review