Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.95 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 90 W
Technical parameters/threshold voltage: 3.75 V
Technical parameters/drain source voltage (Vds): 620 V
Technical parameters/Continuous drain current (Ids): 5.5A
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 875pF @50V(Vds)
Technical parameters/rated power (Max): 90 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 90W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 15.75 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQP8N60C
|
Fairchild | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FQP8N60C 功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 1 ohm, 10 V, 4 V
|
||
FQP8N60C
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FQP8N60C 功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 1 ohm, 10 V, 4 V
|
||
STU6N62K3
|
ST Microelectronics | 功能相似 | TO-251-3 |
N沟道620 V， 0.95 I© （典型值） ， 5.5 SuperMESH3功率MOSFET采用TO- 220FP ， IPAKFP ， IPAK ， TO- 220 ， IPAK包 N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages
|
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