Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 3.60 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 74.0 W
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 3.60 A
Technical parameters/rise time: 13.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBC30A
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET N-CH 600V 3.6A TO-220AB
|
||
IRFBC30A
|
IRF | 完全替代 |
MOSFET N-CH 600V 3.6A TO-220AB
|
|||
STP3NK60Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP3NK60Z 功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.6 ohm, 10 V, 3.75 V
|
||
STP4NK60Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP4NK60Z 功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V
|
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