Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 2.2 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 74 W |
|
Technical parameters/threshold voltage: | 4.5 V |
|
Technical parameters/drain source voltage (Vds): | 600 V |
|
Technical parameters/Continuous drain current (Ids): | 3.60 A |
|
Technical parameters/Input capacitance (Ciss): | 510pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 74 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 74 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Length: | 10.41 mm |
|
Dimensions/Width: | 4.7 mm |
|
Dimensions/Height: | 9.01 mm |
|
Dimensions/Packaging: | TO-220-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Other/Minimum Packaging: | 50 |
|
Other/Manufacturing Applications: | Industrial, power management |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBC30A
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET N-CH 600V 3.6A TO-220AB
|
||
IRFBC30A
|
IRF | 完全替代 |
MOSFET N-CH 600V 3.6A TO-220AB
|
|||
STP3NK60Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP3NK60Z 功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.6 ohm, 10 V, 3.75 V
|
||
STP4NK60Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP4NK60Z 功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V
|
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